PROBE AND DEVICE FOR MEASURING ELECTRON DENSITY AND ELECTRON TEMPERATURE OF PLASMA

• Main Authors: NAKAMURA KEIJI, SUGAI HIDEO
• Format: Patent
• Language: English
• Published: 17.03.2011
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a small measuring probe and a measuring device for measuring an electron density and an electron temperature of a plasma by a simple method without using an expensive measuring device. SOLUTION: The measuring probe 10 includes: a plurality of slits 13, 14 of different lengths; and a structure to have a plurality of resonance frequencies by one measuring probe corresponding to each slit by providing insulating films 15, 16. This allows to calculate the electron density neand the electron temperature Teof the plasma from the resonance frequency dependence of the electron density neand the electron temperature Teof the plasma. COPYRIGHT: (C)2011,JPO&INPIT