SINGLE CRYSTAL PRODUCING APPARATUS

• Main Author: MOTOYAMA TAKESHI
• Format: Patent
• Language: English
• Published: 17.03.2011
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a single crystal producing apparatus promoting growth in a radial direction of a single crystal when a silicon carbide single crystal is produced by using a sublimation method. SOLUTION: The single crystal producing apparatus 1 includes a cylindrical crucible 50 having: a reaction container 30 housing a seed crystal 10 having a prescribed crystal orientation and a raw material 20 for sublimation; and a lid part 40. A first guide member 61, a second guide member 62 and a third guide member 63 are provided between the seed crystal 10 and the raw material 20 for sublimation. The first guide member 61 has a regulating surface 61a regulating a growth range of the single crystal growing on the seed crystal 10. The second guide member 62 is provided in a position nearer to the raw material 20 for sublimation than the first guide member 61 and guides a raw material gas toward an inner wall 31 of the reaction container 30. The third guide member 63 is disposed between the first and second guide members 61 and 62 and has a guiding surface 63a opposed to the regulating surface 61a of the first guide member 61. COPYRIGHT: (C)2011,JPO&INPIT