SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the size of an SOI substrate with a buried layer at lower cost than conventional devices. SOLUTION: The semiconductor device includes: an insulating film 15, which is formed in an internal part of a tabular hollow 11 that is...

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Bibliographic Details
Main Author KITAHARA HIROYOSHI
Format Patent
LanguageEnglish
Published 10.03.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the size of an SOI substrate with a buried layer at lower cost than conventional devices. SOLUTION: The semiconductor device includes: an insulating film 15, which is formed in an internal part of a tabular hollow 11 that is partially formed in an internal part of a p-type silicon substrate 10 and in an internal part of a film formation trench 12 that is formed so as to extend to the hollow 11 from a surface of the silicon substrate 10; and an n-type buried layer 14, which is formed in a peripheral part of the hollow 11 and the film formation trench 12. COPYRIGHT: (C)2011,JPO&INPIT
Bibliography:Application Number: JP20090197129