METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• Main Author: YONEDA KENJI
• Format: Patent
• Language: English
• Published: 17.02.2011
• Subjects: ELECTRICITY

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can form a capacitor having an increase in leakage current suppressed. SOLUTION: The method of manufacturing the semiconductor device includes the processes of: forming a first insulating film and a second insulating film in order on a substrate; forming a hole penetrating the second insulating film to reach the inside of the first insulating film; forming an electrode which covers a bottom and a side face of the hole and is in a channel shape in sectional view; forming a mask having an opening from a part of an upper surface of the electrode to a part of an upper surface of the second insulating film on the electrode and second insulating film; forming an opening in the second insulating film by removing the second insulating film exposed from the opening through dray etching using the mask, and forming a notch portion in an upper part of the electrode exposed from the opening by digging the part of the upper part of electrode; and cutting at least a part of an end of the notch portion through isotropic etching. COPYRIGHT: (C)2011,JPO&INPIT