METHOD FOR PRODUCING SINGLE CRYSTAL BODY

• Main Authors: OSAKO YOSHITO, KAMIYAMA DAISUKE
• Format: Patent
• Language: English
• Published: 17.02.2011
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method for producing a bulky single crystal body in which the generation of pits is suppressed and which has high crystallinity. SOLUTION: The method for producing a single crystal body includes: a process 1 for providing a mask on an inclined part in the upper surface of a seed substrate, wherein the upper surface has a planar part provided from the center to the peripheral edge and the inclined part provided in the peripheral edge to surround the periphery of the planar part; and a process 2 for performing a homoepitaxial growth of the single crystal on the seed substrate by a vapor phase growth method after the process 1. COPYRIGHT: (C)2011,JPO&INPIT