QUANTUM DOT TYPE PHOTODETECTOR

• Main Authors: NISHINO HIROSHI, KIBE MICHIYA, UCHIYAMA YASUHITO, SUZUKI RYO, NAGASHIMA MITSUHIRO, YAMASHITA HIROYASU, MATSUKURA YUSUKE, TOSHIDA MINORU
• Format: Patent
• Language: English
• Published: 10.02.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To enhance sensitivity in a quantum dot type photodetector. SOLUTION: The quantum dot type photodetector includes: a pair of electrode layers formed of an n-type first semiconductor; and an optical absorption layer arranged between the pair of electrode layers. The optical absorption layer includes: a plurality of quantum dot layers where the quantum dots formed of a second semiconductor are alternately laminated with intermediate layers which are formed of a third semiconductor with wider band gap compared with the second semiconductor, so as to cover the quantum dots; and potential fixing layers which are formed of a fourth semiconductor, where electron affinity is larger than that of the third semiconductor, the band gap is smaller than that of the third semiconductor, and a donor concentration is higher than that of the quantum dot layers, and also are arranged between the respective quantum dot layers. COPYRIGHT: (C)2011,JPO&INPIT