THERMOELECTRIC DEVICE, AND METHOD FOR FABRICATING THE SAME

• Main Authors: HYUN YOUNGHOON, ZYUNG TAEHYOUNG, PARK YOUNG SAM, JUN MYUNGSIM, JANG MOON GYU
• Format: Patent
• Language: English
• Published: 20.01.2011
• Subjects: ELECTRICITY

PROBLEM TO BE SOLVED: To provide a thermoelectric device to which semiconductor processes are applied, and to provide a method for fabricating the same.SOLUTION: A thermoelectric device is provided. The thermoelectric device includes first and second electrodes, a first leg, a second leg, and a common electrode. The first leg is disposed on the first electrode and includes at least one or more first semiconductor pattern and at least one or more first barrier patterns. The second leg is disposed on the second electrode and includes at least one or more second semiconductor pattern and at least one or more second barrier patterns. The common electrode is disposed on the first leg and the second leg. Herein, the first barrier pattern has a lower thermal conductivity than the first semiconductor pattern, and the second barrier pattern has a lower thermal conductivity than the second semiconductor pattern. The first/second barrier pattern has a higher electric conductivity than the first/second semiconductor pattern. The first/second barrier pattern forms an ohmic contact with the first/second semiconductor pattern.