SEMICONDUCTOR DEVICE

• Main Authors: YAMAOKA MASANAO, SAKATA TAKESHI
• Format: Patent
• Language: English
• Published: 20.01.2011
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

PROBLEM TO BE SOLVED: To provide an SRAM cell with small dimensions, capable of performing writing by using differential motion without having an effect of a path of write on a state held upon read.SOLUTION: The SRAM cell has NMOS drive transistors MDB and MDT and PMOS load transistors MLB and MLT a...