SEMICONDUCTOR DEVICE

• Main Authors: YAMAOKA MASANAO, SAKATA TAKESHI
• Format: Patent
• Language: English
• Published: 20.01.2011
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

PROBLEM TO BE SOLVED: To provide an SRAM cell with small dimensions, capable of performing writing by using differential motion without having an effect of a path of write on a state held upon read.SOLUTION: The SRAM cell has NMOS drive transistors MDB and MDT and PMOS load transistors MLB and MLT as with a conventional 6 transistor SRAM cell, configures two CMOS inverters connected to a power line VDD and a ground line VSS, and holds data of one bit by positive feedback of cross-couple connection of the inverter pair. A transfer transistor MTB is connected to a bit line BLB via a write transistor MWB2 that is shared by two bits. A read transistor MRT and a write transistor MWT are connected to a bit line BLT side via a transfer transistor MTT. By sharing transistors between adjacent cells using the path of write, the number of transistors is reduced.