COMPOSITION CONTAINING CROSS-LINKABLE MATRIX PRECURSOR AND PORAGEN, AND POROUS MATRIX PREPARED THEREFROM

PROBLEM TO BE SOLVED: To provide an ultra-low dielectric material that is stable to the severe processing conditions required in fabricating semiconductors.SOLUTION: The invention provides a composition comprising (a) a hydrocarbon-containing matrix precursor and (b) a poragen; wherein the matrix pr...

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Bibliographic Details
Main Authors SHAFFER EDWARD O II, TOWNSEND PAUL H III, SMITH DENNIS W JR, NIU QING SHAN J, BRUZA KENNETH J, GODSCHALX JAMES P, BOUCK KEVIN J
Format Patent
LanguageEnglish
Published 20.01.2011
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Summary:PROBLEM TO BE SOLVED: To provide an ultra-low dielectric material that is stable to the severe processing conditions required in fabricating semiconductors.SOLUTION: The invention provides a composition comprising (a) a hydrocarbon-containing matrix precursor and (b) a poragen; wherein the matrix precursor is selected to form upon curing a cross-linked, hydrocarbon-containing material having a Tg of greater than 300°C.
Bibliography:Application Number: JP20100181420