COMPOSITION CONTAINING CROSS-LINKABLE MATRIX PRECURSOR AND PORAGEN, AND POROUS MATRIX PREPARED THEREFROM
PROBLEM TO BE SOLVED: To provide an ultra-low dielectric material that is stable to the severe processing conditions required in fabricating semiconductors.SOLUTION: The invention provides a composition comprising (a) a hydrocarbon-containing matrix precursor and (b) a poragen; wherein the matrix pr...
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Main Authors | , , , , , , |
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Format | Patent |
Language | English |
Published |
20.01.2011
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide an ultra-low dielectric material that is stable to the severe processing conditions required in fabricating semiconductors.SOLUTION: The invention provides a composition comprising (a) a hydrocarbon-containing matrix precursor and (b) a poragen; wherein the matrix precursor is selected to form upon curing a cross-linked, hydrocarbon-containing material having a Tg of greater than 300°C. |
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Bibliography: | Application Number: JP20100181420 |