SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• Main Authors: HATTORI NOBUMI, UMEMURA NOBUAKI, ARIE HIROYUKI, HARA KIMIO, ISHIKAWA MAKOTO, NITTA KYOYA, NAKANISHI NOBUTO
• Format: Patent
• Language: English
• Published: 13.01.2011
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To solve the problem in a semiconductor device having a laterally diffused (LD) MOSFET, which are caused by the fact that a source electrode is at the backside thereof, to reduce electric resistance between a source contact region in the top surface and the source electrode at the backside, a poly-silicon buried plug is provided which extends from the upper surface into a P+ type substrate through a P type epitaxial layer and is heavily doped with boron, but dislocation occurs in a mono-crystalline silicon region around the poly-silicon buried plug to induce a leakage failure.SOLUTION: The semiconductor device has a silicon-based plug extending through the boundary surface between first and second semiconductor layers having different impurity concentrations. At least the inside of the plug is a poly-crystalline region. Of the surface of the poly-crystalline region, the portions located on both sides of the foregoing boundary surface in adjacent relationship thereto are each covered with a solid-phase epitaxial region.