MEMORY

PROBLEM TO BE SOLVED: To provide a memory which materializes both ROM and RAM using memory devices of the same constitution.SOLUTION: The memory includes: a plurality of memory devices 1, each including a tunnel magnetoresistive effect device containing a magnetic free layer 18 in which the directio...

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Main Authors OISHI TAKENORI, IGARASHI MINORU, YAMANE KAZUAKI, YAMAMOTO TETSUYA, HOSOMI MASAKATSU, HIGO YUTAKA, KUSUNOKI SHINICHIRO, OMORI HIROYUKI, BESSHO KAZUHIRO, KANO HIROSHI
Format Patent
LanguageEnglish
Published 13.01.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:PROBLEM TO BE SOLVED: To provide a memory which materializes both ROM and RAM using memory devices of the same constitution.SOLUTION: The memory includes: a plurality of memory devices 1, each including a tunnel magnetoresistive effect device containing a magnetic free layer 18 in which the direction of magnetization M1 can be reversed, a tunnel barrier layer 17 including an insulating material, and a pinned magnetic layer 13 provided with respect to the magnetic free layer 18 via the tunnel barrier layer 17 with the fixed directions of magnetization M14 and M16; a random access memory area in which information is recorded using the direction of the magnetization M1 of the magnetic free layer 18 of the memory device 1; and a read only memory area in which information is recorded depending on whether there is a breakdown of the tunnel barrier layer 17 of the memory device 1 or not.
Bibliography:Application Number: JP20090151515