METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal in which a structural defect arises owing to the reduction in airtightness of an adhesive layer is suppressed.SOLUTION: A coated layer 40 is formed on a coated surface 30a of a seed crystal 30 using a coating ag...

Full description

Saved in:
Bibliographic Details
Main Author MOTOYAMA TAKESHI
Format Patent
LanguageEnglish
Published 13.01.2011
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal in which a structural defect arises owing to the reduction in airtightness of an adhesive layer is suppressed.SOLUTION: A coated layer 40 is formed on a coated surface 30a of a seed crystal 30 using a coating agent containing a phenol resin and a silicon carbide grain 80, and an adhesive layer 50 interposed between the coated layer 40 and a seed crystal mount 10b is formed using adhesives. The thickness of the coated layer 40 is 5 to 20 μm, and the coated layer 40 contains the silicon carbide grain 80 in an amount of 1 to 20% by volume.
Bibliography:Application Number: JP20090152732