THIN FILM FORMING METHOD

• Main Authors: SAITO MITSUHISA, TSUKADA YUTO, YOSHITANI KEIJI, FUKUHARA HIRONORI, HORIUCHI KOYO, IMANAKA SEIJI, ONO TAKESHI, HIRANO TOSHIAKI, INOUE MASAHIRO
• Format: Patent
• Language: English
• Published: 16.12.2010
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To reliably form a thin film on a substrate by eliminating any rise time loss when restarting the production without dropping the temperature inside a vapor deposition apparatus even during the waiting time, and by suppressing any unnecessary deposition of vapor-deposited particles on a conveying tool. SOLUTION: In a thin film forming method, a thin film is deposited on a substrate placed on a conveying tool by irradiating a target with electron beams. The charging power on an electron gun as an electron beam source for generating electron beam is set to be substantially same between the film deposition mode in which the thin film is deposited on the substrate placed on the conveying tool, and the waiting mode in which any substrate is not placed on the conveying tool, and the irradiation area of the electron beam to be irradiated to the target during the waiting mode is different so as to suppress the film deposition rate while keeping the temperature inside a vapor deposition apparatus. COPYRIGHT: (C)2011,JPO&INPIT