EPITAXIAL GROWTH APPARATUS
PROBLEM TO BE SOLVED: To provide an epitaxial growth apparatus capable of controlling flow of purge gas to be made to flow into a communication channel, suppressing deposition of bi-products on an upper wall face of the communication channel, reducing the generation amount of particles on a semicond...
Saved in:
Main Authors | , , , , |
---|---|
Format | Patent |
Language | English |
Published |
02.12.2010
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!