EPITAXIAL GROWTH APPARATUS

• Main Authors: HEBIKAWA YORIHIRO, SUGIMOTO SEIJI, ONO NAOKI, KISHI HIROYUKI, HAMANO MANABU
• Format: Patent
• Language: English
• Published: 02.12.2010
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide an epitaxial growth apparatus capable of controlling flow of purge gas to be made to flow into a communication channel, suppressing deposition of bi-products on an upper wall face of the communication channel, reducing the generation amount of particles on a semiconductor wafer, and consequently reducing the generation amount of LPD. SOLUTION: Reaction gas for forming an epitaxial film on the surface of the semiconductor wafer is supplied from the supply port of a reaction chamber, and the reaction gas is made to flow to a discharge port disposed facing the supply port. In the meantime, the purge gas is injected to the communication channel which is long in a direction roughly orthogonal to the flow of the reaction gas. At the time, in the communication channel, the flow rate of the purge gas on the supply port side is made more than that on the discharge port side. COPYRIGHT: (C)2011,JPO&INPIT