SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device using a guard ring, which secures desired withstand voltage characteristics even when a foreign matter or the like sticks on the surface of a conductive film. SOLUTION: The semiconductor device is provided with a p-type guard ring region 7 surr...

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Bibliographic Details
Main Authors TARUI YOICHIRO, NARASAKI ATSUSHI, FUJII RYOICHI
Format Patent
LanguageEnglish
Published 25.11.2010
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device using a guard ring, which secures desired withstand voltage characteristics even when a foreign matter or the like sticks on the surface of a conductive film. SOLUTION: The semiconductor device is provided with a p-type guard ring region 7 surrounding a pn junction region 8, an insulating film 9 covering the p-type guard ring region 7, the conductive film 11 electrically connected to the p-type guard ring region 7 through a contact hole 10 provided to the insulating film 9, and a semi-insulating film 12 covering the insulating film 9 and conductive film 11. Further, the conductive film 11 is intermittently provided. Consequently, even when the foreign matter or the like sticks on the surface of the conductive film 11, the desired withstand voltage characteristics can be secured. COPYRIGHT: (C)2011,JPO&INPIT
Bibliography:Application Number: JP20090115502