SOI WAFER, METHOD FOR PRODUCING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide an SOI wafer which includes a high gettering ability for metal impurities. SOLUTION: In the SOI wafer 10, a BOX layer 2 formed by thermal oxidation is formed on the upper side of a supporting substrate 1. A gettering layer 3 made of silicon with either of combination...

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Bibliographic Details
Main Author YONEDA KENJI
Format Patent
LanguageEnglish
Published 11.11.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide an SOI wafer which includes a high gettering ability for metal impurities. SOLUTION: In the SOI wafer 10, a BOX layer 2 formed by thermal oxidation is formed on the upper side of a supporting substrate 1. A gettering layer 3 made of silicon with either of combinations of oxygen, oxygen and carbon, oxygen and nitrogen, oxygen, carbon and nitrogen is formed right above the BOX layer 2, and an S layer 4 made of single crystal silicon is formed right above the gettering layer 3 to form semiconductor elements thereon. COPYRIGHT: (C)2011,JPO&INPIT
Bibliography:Application Number: JP20090104063