CLEANING LIQUID FOR LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN USING THE SAME

• Main Authors: MASUJIMA MASAHIRO, KUMAGAI TOMOYA, KOSHIYAMA JUN
• Format: Patent
• Language: English
• Published: 11.11.2010
• Subjects: ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES; APPARATUS SPECIALLY ADAPTED THEREFOR; CANDLES; CHEMISTRY; CINEMATOGRAPHY; DETERGENT COMPOSITIONS; DETERGENTS; ELECTROGRAPHY; FATTY ACIDS THEREFROM; HOLOGRAPHY; MATERIALS THEREFOR; METALLURGY; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; RECOVERY OF GLYCEROL; RESIN SOAPS; SOAP OR SOAP-MAKING; USE OF SINGLE SUBSTANCES AS DETERGENTS

PROBLEM TO BE SOLVED: To provide a cleaning liquid for lithography which suppresses occurrence of CD shift without inhibiting the effect of preventing pattern collapse by a surfactant, and a pattern formation method using the cleaning liquid for lithography. SOLUTION: In the cleaning liquid for lithography containing (A) an anionic surfactant, (B) an amine compound, and (C) water, the anionic surfactant and the amine compound form a salt in the cleaning liquid for lithography, and thus penetration of the anionic surfactant into a resist film is suppressed. Accordingly, even when the method for forming a resist pattern using this cleaning liquid for lithography, the resist film is not dissolved, whereby occurrence of CD shift is efficiently suppressed. COPYRIGHT: (C)2011,JPO&INPIT