CLEANING LIQUID FOR LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN USING THE SAME

PROBLEM TO BE SOLVED: To provide a cleaning liquid for lithography which suppresses occurrence of CD shift without inhibiting the effect of preventing pattern collapse by a surfactant, and a pattern formation method using the cleaning liquid for lithography. SOLUTION: In the cleaning liquid for lith...

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Bibliographic Details
Main Authors MASUJIMA MASAHIRO, KUMAGAI TOMOYA, KOSHIYAMA JUN
Format Patent
LanguageEnglish
Published 11.11.2010
Subjects
ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES
APPARATUS SPECIALLY ADAPTED THEREFOR
CANDLES
CHEMISTRY
CINEMATOGRAPHY
DETERGENT COMPOSITIONS
DETERGENTS
ELECTROGRAPHY
FATTY ACIDS THEREFROM
HOLOGRAPHY
MATERIALS THEREFOR
METALLURGY
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
RECOVERY OF GLYCEROL
RESIN SOAPS
SOAP OR SOAP-MAKING
USE OF SINGLE SUBSTANCES AS DETERGENTS
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Summary:PROBLEM TO BE SOLVED: To provide a cleaning liquid for lithography which suppresses occurrence of CD shift without inhibiting the effect of preventing pattern collapse by a surfactant, and a pattern formation method using the cleaning liquid for lithography. SOLUTION: In the cleaning liquid for lithography containing (A) an anionic surfactant, (B) an amine compound, and (C) water, the anionic surfactant and the amine compound form a salt in the cleaning liquid for lithography, and thus penetration of the anionic surfactant into a resist film is suppressed. Accordingly, even when the method for forming a resist pattern using this cleaning liquid for lithography, the resist film is not dissolved, whereby occurrence of CD shift is efficiently suppressed. COPYRIGHT: (C)2011,JPO&INPIT
Bibliography:Application Number: JP20090265213