VAPOR DEPOSITION APPARATUS

• Main Authors: DAIKU HIROYUKI, KAMIKAWA KENJI
• Format: Patent
• Language: English
• Published: 28.10.2010
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To properly perform feedback control by precisely detecting a deposition rate from a detection nozzle to a detection element even if a deposition rate to a substrate is significantly changed. SOLUTION: In a vacuum film deposition chamber 11, a dispersion vessel 14 having a plurality of vapor deposition nozzles 15 is arranged opposite to a substrate 12. A detection nozzle 32 is installed so as to pass through the dispersion chamber 14, and a deposition rate detection element 33 is arranged opposite to the detection nozzle 32. A deposition rate control means 34 is provided for changing the distance between the deposition rate detection element 33 and an injection hole of the detection nozzle 32. The distance between the injection hole 32a of the detection nozzle 32 and the deposition rate detection element 33 is controlled depending on the deposition rate. COPYRIGHT: (C)2011,JPO&INPIT