SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME

• Main Author: MOCHO YOSHINOBU
• Format: Patent
• Language: English
• Published: 07.10.2010
• Subjects: ELECTRICITY

PROBLEM TO BE SOLVED: To surely prevent a capacitive insulating film constituting the capacitor of a semiconductor memory device from being degraded due to hydrogen, by means of a simpler manufacturing process than before. SOLUTION: The semiconductor memory device includes: a memory region 310 formed on a semiconductor substrate 201; a peripheral circuit region 300 formed adjacent to the memory region; a lower hydrogen barrier film 210 formed between the semiconductor substrate 201 and a first interlayer insulating film 205, at least to cover the memory region 310 and to extend to the peripheral circuit region; and at least one capacitor 215 formed on the first interlayer insulating film 205 in the memory region 310, and comprising a lower electrode 212, the capacitive insulating film 213 including a ferroelectric substance, and an upper electrode 214. The device also has an upper hydrogen barrier film 218 formed to cover the upper and side regions of the capacitor 215, and to be directly connected to the lower hydrogen barrier film 210 all over the periphery of the memory region 310. COPYRIGHT: (C)2011,JPO&INPIT