ORGANIC SOLVENT BASED DEVELOPMENT OR MULTIPLE DEVELOPMENT PATTERN-FORMING METHOD USING ELECTRON BEAM OR EUV RAY

PROBLEM TO BE SOLVED: To provide a pattern-forming method, which satisfies high sensitivity, high resolution, a good pattern form and a residual film rate in a super-fine processing region. SOLUTION: The pattern-forming method includes, in the following order: (1) a process of forming a film with an...

Full description

Saved in:
Bibliographic Details
Main Authors TSUBAKI HIDEAKI, SHIRAKAWA KOJI, DOBASHI TORU
Format Patent
LanguageEnglish
Published 30.09.2010
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:PROBLEM TO BE SOLVED: To provide a pattern-forming method, which satisfies high sensitivity, high resolution, a good pattern form and a residual film rate in a super-fine processing region. SOLUTION: The pattern-forming method includes, in the following order: (1) a process of forming a film with an actinic ray-sensitive or radiation-sensitive resin composition including a resin which includes an acid-decomposable repeating unit and decreases in the solubility in an organic solvent by the action of an acid; (2) a process of exposing the film with an electron beam or an EUV ray; and (4) a process of developing the film with a developer containing an organic solvent after exposure. COPYRIGHT: (C)2010,JPO&INPIT
Bibliography:Application Number: JP20100033917