GAS DEPOSITION DEVICE AND GAS DEPOSITION METHOD

• Main Author: FUCHIDA HIDETSUGU
• Format: Patent
• Language: English
• Published: 24.09.2010
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a gas deposition device wherein a gas supplying amount is reduced. SOLUTION: The gas deposition device 1 includes a gas regulating mechanism having a movable member 15 positioned in either of a position fitted to a conveyance tube 4 and a position not fitted thereto and a sucking mechanism 7 having a sucking port 18 positioned in a position on a flow path of a fine particle stream f and an another position. Since the movable member 15 is fitted to the conveyance tube 4 when film-deposition is stopped, a flow amount of gas flowing in a first aperture 4c of the conveyance tube 4 is regulated and at the same time the sucking port 18 sucks the regulated gas flow amount on the path of the fine particle stream f. A necessary gas amount is reduced by diverting a portion of the gas flow amount conveying fine particles through the conveying tube 4 upon film-deposition to exhaust of the fine particles upon stopping of film-deposition. COPYRIGHT: (C)2010,JPO&INPIT