HIGH FREQUENCY POWER AMPLIFIER CIRCUIT

• Main Authors: KAWAGUCHI SUSUMU, HAMAYA KAZUHIRO, TANJI MASAKI
• Format: Patent
• Language: English
• Published: 16.09.2010
• Subjects: AMPLIFIERS; BASIC ELECTRONIC CIRCUITRY; ELECTRICITY

PROBLEM TO BE SOLVED: To provide a high frequency power amplifier circuit for large power, which is high in efficiency and economically advantageous by reducing a mounting number of power MOS-FETs. SOLUTION: In this high frequency power amplifier circuit, gate pulses for intermittently subjecting a pair of power MOS-FETs to high frequency power amplification are supplied in synchronization with a high frequency signal to the respective gate electrodes of the pair of power MOS-FETs from a gate pulse input end of the high frequency power amplifier circuit comprising the pair of power MOS-FETs 11a, 11b performing power amplification by a class AB push-pull operation. Power voltage for operation is supplied to the respective drain electrodes D of the pair of power MOS-FETs from a supply end of the power voltage for operation. A gate bias protection circuit is arranged between the respective gate electrodes G of the pair of power MOS-FETs and the gate pulse input end, and suppresses return currents flowing from the drain electrodes D to the gate pulse input end. COPYRIGHT: (C)2010,JPO&INPIT