SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• Main Author: ONISHI KAZUHIRO
• Format: Patent
• Language: English
• Published: 09.09.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of simultaneously reducing breakdown voltages, reverse leakage currents, and dynamic resistance. SOLUTION: The semiconductor device includes a laminate 2, where a quantum well layer (SiGe layer 3) is sandwiched between barrier layers (silicon layers 4) having a band gap wider than that of the quantum well layer and a dielectric constant smaller than that of the quantum well layer. In the semiconductor device, a first impurity region (p+-type impurity region 5), and a second one (n+-type impurity region 6) that is adjacent to the first impurity region and has a conductivity type differing from that of the first impurity region are formed so that they reach the barrier layer of the lowest layer from the surface of the barrier layer of the uppermost layer, and electrodes 8, 9 electrically connected to the first and second impurity regions are provided on the surface of the barrier layer of the uppermost layer. COPYRIGHT: (C)2010,JPO&INPIT