SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a breakdown voltage. SOLUTION: In the semiconductor device, a second base layer (n+-type SiGe layer 2) having a dielectric constant larger than that of a first base layer and the same conductivity type as that of the first b...

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Bibliographic Details
Main Author ONISHI KAZUHIRO
Format Patent
LanguageEnglish
Published 09.09.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a breakdown voltage. SOLUTION: In the semiconductor device, a second base layer (n+-type SiGe layer 2) having a dielectric constant larger than that of a first base layer and the same conductivity type as that of the first base layer is formed on one surface of the first base layer (n+-type silicon substrate 1), an impurity region (p+-type impurity region 7) having conductivity differing from that of the second base layer is formed in the surface layer of the second base layer, and a polycrystalline film (p+-type polycrystalline silicon film) having the same conductivity type as that of the impurity region is formed on the impurity region. COPYRIGHT: (C)2010,JPO&INPIT
Bibliography:Application Number: JP20090040064