APPARATUS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

• Main Author: HARA KAZUTO
• Format: Patent
• Language: English
• Published: 02.09.2010
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide an apparatus for producing a silicon carbide single crystal enabling to inhibit abrupt pressure rise in the apparatus even when a cooling liquid in the apparatus leaks out by breakage of a cooling section. SOLUTION: The apparatus comprises a crucible 30 in a vacuum container, wherein a seed crystal is arranged, a gas introducing pipe 50 to supply a mixed gas from a lower side to an inner space 31 of the crucible 30, and the cooling section 70 placed at a position free of interrupting a supply route of the mixed gas, being apart from the crucible 30. The crucible 30 has a through-hole 30a at the bottom, and the mixed gas is supplied via the through-hole 30a. The gas introducing pipe 50 is placed apart from the reactor 30. The cooling section 70 is placed on the side face of the gas introducing pipe 50 at the end toward the reactor 30, where at least a part of the section is arranged at a lower position than the reactor 30. The mechanical strength of the wall of the cooling section 70 in a portion other than opposing to an inner region of the reactor 30, is lower than that of an opposing portion. COPYRIGHT: (C)2010,JPO&INPIT