SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a technology improving reliability by suppressing degradation of driving power, in a semiconductor device including a nonvolatile memory cell. SOLUTION: A memory cell MC1 is formed with a selecting pMIS (Qpc) having a selection gate electrode CG formed of a conductiv...

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Bibliographic Details
Main Authors HARAGUCHI KEIICHI, KAWASHIMA SACHIYUKI
Format Patent
LanguageEnglish
Published 19.08.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a technology improving reliability by suppressing degradation of driving power, in a semiconductor device including a nonvolatile memory cell. SOLUTION: A memory cell MC1 is formed with a selecting pMIS (Qpc) having a selection gate electrode CG formed of a conductive film exhibiting p-type conductivity, and a pMIS (Qpm) for a memory having a memory gate electrode MG formed of a conductive film exhibiting p-type conductivity; hot electrons are injected into a charge storage layer CSL from a semiconductor substrate 1 side upon writing; and hot holes are injected into the charge storage layer CSL from the memory gate electrode MG upon erasing. COPYRIGHT: (C)2010,JPO&INPIT
Bibliography:Application Number: JP20090027604