SOLID-STATE IMAGE PICK-UP DEVICE AND METHOD OF MANUFACTURING THE SAME, IMAGE PICK-UP DEVICE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR SUBSTRATE

PROBLEM TO BE SOLVED: To provide a solid-state image pick-up device capable of suppressing noise caused owing to a gettering layer. SOLUTION: The solid-state image pick-up device 1 includes a semiconductor substrate body 32 which has an element forming layer 39 and the gettering layer 33 provided on...

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Bibliographic Details
Main Author IWABUCHI MAKOTO
Format Patent
LanguageEnglish
Published 19.08.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a solid-state image pick-up device capable of suppressing noise caused owing to a gettering layer. SOLUTION: The solid-state image pick-up device 1 includes a semiconductor substrate body 32 which has an element forming layer 39 and the gettering layer 33 provided on the upper layer thereof; n-type photoelectric conversion elements 15 formed in the element forming layer 39; and a hafnium oxide film 34 which is provided on the upper layer of the gettering layer 33, so that the surface of the gettering layer 33 and its vicinity can be placed in positive electric charge storage state with negative fixed electric charges that the hafnium oxide film 34 has. COPYRIGHT: (C)2010,JPO&INPIT
Bibliography:Application Number: JP20090026368