REAR INCIDENT PHOTODIODE ARRAY AND RADIATION DETECTOR

• Main Authors: TAGUCHI TOMOYA, MURAMATSU NORIYUKI, FUJII YOSHIMARO, YONEDA MASATATSU
• Format: Patent
• Language: English
• Published: 29.07.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MEASUREMENT OF NUCLEAR OR X-RADIATION; MEASURING; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

PROBLEM TO BE SOLVED: To provide a rear incident photodiode array that suppresses the occurrence of noise caused by forming modified regions and can improve the suppression effects of crosstalks. SOLUTION: The photodiode array 1 includes: an n-type semiconductor substrate 3 including a front and rear surfaces 3a, 3b facing each other; a plurality of p-type semiconductor regions 5 that are disposed side by side, on the rear surface 3b side of the semiconductor substrate 3 and each compose a photodiode 13 by a p-n junction 11 with the semiconductor substrate 3; and an n-type semiconductor region 7 that is disposed between the adjacent p-type semiconductor regions 5, at the rear surface 3b side and has an impurity concentration set higher than that of the semiconductor substrate 3, and a modified region 50 is formed, while reaching the front surface 3a, without reaching the n-type semiconductor region 7 on the semiconductor substrate 3, by focusing the focusing point to a prescribed position between the front surface 3a and having the n-type semiconductor region 7 irradiated with laser beams. COPYRIGHT: (C)2010,JPO&INPIT