PHOTODIODE ARRAY AND RADIATION DETECTOR

• Main Authors: TAGUCHI TOMOYA, MURAMATSU NORIYUKI, FUJII YOSHIMARO, YONEDA MASATATSU
• Format: Patent
• Language: English
• Published: 29.07.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a photodiode array, capable of suppressing deterioration in THE mechanical strength of semiconductor substrates caused by forming modified regions, and making the suppression effects of crosstalks improve. SOLUTION: The photodiode array 1 includes: the semiconductor substrate 3; and a plurality of p-type semiconductor regions 5 that are disposed side by the side, at the back 3b side of the semiconductor substrate 3 and each compose a photodiode 13 by a p-n junction 11 to the semiconductor substrate 3. The two modified regions 50 are formed, by setting a focusing point to emit laser beams at a prescribed position, in a region between the adjacent p-type semiconductor regions 5 on the semiconductor substrate 3, while the modified regions are separated, in the arranging direction of the p-type semiconductor regions 5 and extend, in a direction of crossing the arrangement direction of the p-type semiconductor regions 5. COPYRIGHT: (C)2010,JPO&INPIT