ELECTROMIGRATION RESISTANT VIA-TO-LINE INTERCONNECT

• Main Authors: SULLIVAN TIMOTHY DOOLING, MCLAUGHLIN PAUL STEPHAN, BAOCHEN LEE
• Format: Patent
• Language: English
• Published: 15.07.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide an electromigration resistant via-to-line interconnect including a metal line and a conductive via and to provide a manufacturing method of the same. SOLUTION: A metal interconnect structure has a liner-to-liner direct contact formed between an upper metallic liner 50 of a conductive via and a lower metallic liner 20 of a metal line below. The liner-to-liner contact impedes abrupt electromigration failures and enhances electromigration resistance of the metal interconnect structure. At least one dielectric material portion may include a plurality of dielectric material portions arranged to insure direct contact of between the upper metallic liner 50 and the lower metallic liner 20. Alternatively, at least the one dielectric material portion may comprise a single dielectric portion whose area has a sufficient lateral overlap with the area of the conductive via to insure that a liner-to-liner direct contact is formed within the range of allowed lithographic overlay variations. COPYRIGHT: (C)2010,JPO&INPIT