METHOD AND DEVICE FOR PRODUCING POLYCRYSTALLINE SILICON

PROBLEM TO BE SOLVED: To stabilize the treatment for converting an exhaust gas into a raw material, to rise the productivity of a polycrystalline silicon and to improve and stabilize a quality by appropriately separating gas and liquid by cooling the exhaust gas without generating a liquid state mis...

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Bibliographic Details
Main Authors ENDO TOSHIHIDE, TAKEGUCHI MASAKATSU
Format Patent
LanguageEnglish
Published 08.07.2010
Subjects
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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Summary:PROBLEM TO BE SOLVED: To stabilize the treatment for converting an exhaust gas into a raw material, to rise the productivity of a polycrystalline silicon and to improve and stabilize a quality by appropriately separating gas and liquid by cooling the exhaust gas without generating a liquid state mist and. SOLUTION: In the method for producing the polycrystalline silicon wherein the polycrystalline silicon is deposited by reacting the raw material gas containing chlorosilane at high temperature, the exhaust gas is subjected to gas-liquid separation by cooling with a heat exchanger, the gas part and the liquid part are purified and distilled and used as a part of the raw material gas, the raw material gas is passed at a flow rate of 4-7 m/sec in a heat exchanger when the exhaust gas is cooled. COPYRIGHT: (C)2010,JPO&INPIT
Bibliography:Application Number: JP20090271988