SPUTTERING FILM DEPOSITION SYSTEM

• Main Authors: KOGURE KIMIO, ITO AKIHIKO, SUGIYAMA KIMIO, ONODA TOSHIYASU
• Format: Patent
• Language: English
• Published: 10.06.2010
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a multi-chamber type sputtering film deposition system wherein the compacting of the whole is achieved, and further, efficient treatment is performed. SOLUTION: The sputtering film deposition system includes: an attachment/detachment mechanism 16 by which the attachment/detachment of a wafer W is performed to a wafer holder; a pretreatment chamber 34 where pretreatment is performed to the wafer W; and a plurality of film deposition chambers 35a to 35d where sputtering film deposition treatment is performed to the wafer W. The insides of the respective film deposition chambers 35a to 35d are provided with electrostatic chuck tables 62 rotatable in a state where the wafer W is electrostatically adsorbed, and a plurality of sputtering sources 51 are provided for one film deposition chamber, while the respective sputtering sources 51 are mounted with targets 50 confronted while being tilted to an electrostatic adsorption face 62a, and, in the respective film deposition chambers 35a to 35d, a shutter 65 capable of shielding at least one of the plurality of sputtering sources 51 to a discharge space in each film deposition chamber is provided. COPYRIGHT: (C)2010,JPO&INPIT