METHOD FOR MANUFACTURING CRYSTAL

• Main Author: NISHIGUCHI TARO
• Format: Patent
• Language: English
• Published: 10.06.2010
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method for manufacturing a crystal which suppresses cracking of a crucible and produces a crystal to which mixing of unintended impurities is suppressed. SOLUTION: The method for manufacturing the crystal is equipped with a process for preparing an apparatus for manufacturing a crystal in which a buffer layer 110 is arranged between an inner wall 101a of a crucible 101 and a raw material 17 and a process for growing a crystal in the apparatus for manufacturing a crystal. In the preparing process, the buffer layer 110 having a melting point higher than the temperature for growing a crystal in the growing process and at least one of higher porosity, higher ductility and higher brittleness than those of a material which composes the crucible 101 is arranged. COPYRIGHT: (C)2010,JPO&INPIT