FILM DEPOSITION METHOD

• Main Authors: SHIONO ICHIRO, TAKAHASHI YOSHINORI, OKUYAMA SATOSHI, KYO YUSHO
• Format: Patent
• Language: English
• Published: 20.05.2010
• Subjects: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; THEIR RELEVANT APPARATUS; TRANSPORTING

PROBLEM TO BE SOLVED: To provide a film deposition method for efficiently performing film deposition of a hydrophilic thin film on a plastic substrate without performing any special pre-processing or post-processing. SOLUTION: The film deposition method for depositing a thin film on the surface of a plastic substrate S comprises a step (S4) of depositing the sputtering substance of titanium targets 22a, 22b on the substrate S in a film deposition process area 20A formed inside a vacuum vessel 11, and a step (S5) of bringing oxygen gas into contact with the substrate S in a reaction process area 60A formed apart from the film deposition process area 20A, inside the vacuum vessel 11 to convert the composition of the sputtering substance. Oxygen gas is brought into contact with the substrate S under such conditions that argon gas of the amount at least the same as the introduction flow rate of oxygen gas is introduced and the plasma processing power of ≤1 kW is supplied. COPYRIGHT: (C)2010,JPO&INPIT