QUANTUM DOT TYPE INFRARED DETECTING ELEMENT

• Main Authors: NISHINO HIROSHI, KIBE MICHIYA, UCHIYAMA YASUHITO, NAGASHIMA MITSUHIRO, KAJIWARA NOBUYUKI, TOSHIDA MINORU
• Format: Patent
• Language: English
• Published: 06.05.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To improve quantum efficiency in a quantum dot type infrared detecting element in which a photoelectric conversion layer is formed by a quantum dot layer. SOLUTION: The quantum dot type infrared detecting element has: a semiconductor substrate; a plurality of photoelectric conversion layers in which a plurality of quantum dot layers having a plurality of quantum dots formed on the same planar and an intermediate layer covering the quantum dots is laminated on the semiconductor substrate; and a distortion buffer layer matching with the semiconductor substrate and in which a p-type semiconductor layer and an n-type semiconductor layer are laminated. The photoelectric conversion layers are laminated via the distortion buffer layer. COPYRIGHT: (C)2010,JPO&INPIT