PRODUCTION METHOD OF HIGH PURITY SILICON

PROBLEM TO BE SOLVED: To reduce the equipment cost and energy cost as well as to improve the yield of raw material silicon, and to provide a production method of high purity silicon with stable qualities and high productivity, for producing high purity silicon for a solar cell from a low-grade metal...

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Bibliographic Details
Main Authors NAKASONE TOYOKAZU, NAKAHORI KIYOSHI, NOMURA EIJI
Format Patent
LanguageEnglish
Published 06.05.2010
Subjects
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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Summary:PROBLEM TO BE SOLVED: To reduce the equipment cost and energy cost as well as to improve the yield of raw material silicon, and to provide a production method of high purity silicon with stable qualities and high productivity, for producing high purity silicon for a solar cell from a low-grade metal silicon by a metallurgical refining method. SOLUTION: A melting furnace for melting metal silicon has two or more types of heating devices such as an electromagnetic induction system, a plasma system and an electron beam system. Impurities included in raw material silicon are efficiently removed by subjecting melted silicon to a combination of a vacuum process with an oxidation process and a reduction process in different gas atmospheres in a single melting furnace. COPYRIGHT: (C)2010,JPO&INPIT
Bibliography:Application Number: JP20080294923