FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS

• Main Authors: NODERA NOBUTAKE, HASEBE KAZUHIDE, MATSUNAGA MASANOBU
• Format: Patent
• Language: English
• Published: 22.04.2010
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a film deposition method capable of feeding a large amount of raw material gas in a processing vessel while maintaining the safety when intermittently feeding the raw material gas, not only enhancing the film deposition rate but also controlling the concentration of the element contained in the raw material gas in a film as a result, and increasing, for example, the concentration of the element. SOLUTION: In the film deposition method for depositing a thin film on a surface of a workpiece W in a processing vessel 4 which can be evacuated with the workpiece W being accommodated therein, an adsorbing step of adsorbing raw material gas on a surface of the workpiece W by feeding the raw material gas in the processing vessel 4 a plurality of times with an intermittent period therebetween, and a reaction step of forming the thin film by feeding the reactive gas in the processing vessel 4 so as to be reacted with the raw material gas adsorbed on the surface of the workpiece W are alternately repeated a plurality of times. COPYRIGHT: (C)2010,JPO&INPIT