POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV LIGHT AND PATTERN-FORMING METHOD USING THE SAME

• Main Authors: NISHIKAWA NAOYUKI, TSUBAKI HIDEAKI, TSUCHIMURA TOMOTAKA, DOBASHI TORU, YAMASHITA KATSUHIRO, TAKAHASHI HIDETOMO
• Format: Patent
• Language: English
• Published: 15.04.2010
• Subjects: ACYCLIC OR CARBOCYCLIC COMPOUNDS; APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC CHEMISTRY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP

PROBLEM TO BE SOLVED: To provide a positive resist composition for an electron beam, X-ray or EUV light which simultaneously satisfies high sensitivity, high resolution, a good pattern shape and good line edge roughness in an ultrafine area, and a pattern-forming method using the same. SOLUTION: The positive resist composition for an electron beam, X-ray or EUV light includes a resin including a repeating unit having a specific oxime sulfonate structure and a repeating unit having a group which is decomposed by the action of an acid to produce an alkali-soluble group. The pattern-forming method using the same is also provided. COPYRIGHT: (C)2010,JPO&INPIT