COPPER FILM ANNEALING METHOD, ANNEALED COPPER FILM, AND DEVICE HAVING COPPER WIRING

PROBLEM TO BE SOLVED: To provide a copper film annealing method which can improve reliability of copper wiring by reducing an electric resistance of copper wiring, stabilizing it, and removing an impurity. SOLUTION: The copper film is formed on a silicon substrate with a barrier layer formed by a pl...

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Bibliographic Details
Main Authors YOMOGIDA SHIGERU, HASHIMOTO AKIKO, SHIMADA YUSHI, UENO KAZUYOSHI, YADA TAKASHI
Format Patent
LanguageEnglish
Published 08.04.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a copper film annealing method which can improve reliability of copper wiring by reducing an electric resistance of copper wiring, stabilizing it, and removing an impurity. SOLUTION: The copper film is formed on a silicon substrate with a barrier layer formed by a plating method or a vapor deposition method. The copper film is treated in a gas of carbon dioxide at 200°C-300°C, 2-30 MPa, or in a gas of an inert element, or in a super-critical carbon dioxide, or in a gas or fluid of the above gas containing hydrogen. COPYRIGHT: (C)2010,JPO&INPIT
Bibliography:Application Number: JP20090196372