METHOD FOR MANUFACTURING OPTICAL FILTER

• Main Authors: SUGAWARA TAKUYA, SHIONO ICHIRO, TOGASHI YASUHISA, KYO YUSHO, SATO TOSHIHIKO
• Format: Patent
• Language: English
• Published: 08.04.2010
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY; GLASS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; JOINING GLASS TO GLASS OR OTHER MATERIALS; METALLURGY; MINERAL OR SLAG WOOL; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; PHYSICS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a method for manufacturing an optical filter having a good film quality by removing foreign matters stuck onto the surface of a substrate by cleaning before forming a thin film. SOLUTION: The foreign matters stuck onto the surface of the substrate can be effectively removed by performing a cleaning process P1 for cleaning the substrate S by using a solution containing water, a pretreatment process P3 for treating the surface of the substrate S cleaned in the cleaning process P1 with a plasma of oxygen gas, and a thin film forming process (P4, P5) for forming a thin film on the surface the substrate S treated with the plasma in the pretreatment process P3. Further, in the pretreatment process P3, only oxygen is introduced into a region for generating the plasma and the flow rate of the introduced oxygen gas is set to be larger than that of the oxygen gas introduced in the thin film forming process. Thereby, the foreign matters stuck on the surface of the substrate S through OH-group bond in the cleaning process are effectively removed before the thin film forming process (P4, P5), and the occurrence of film omission parts is prevented. COPYRIGHT: (C)2010,JPO&INPIT