METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

• Main Author: NAKAHIRA JUNYA
• Format: Patent
• Language: English
• Published: 02.04.2010
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can use an SiC film whose dielectric ratio is reduced as a film for preventing the diffusion of copper. SOLUTION: In the method of manufacturing the semiconductor device, a first SiC film which does not contain oxygen is deposited on the upper side of a semiconductor substrate by using a material in which -CH2- bond annularly connects two bonding hands of Si, functional groups R1 and R2 are bonded to remaining two bonding hands of Si, respectively, and the functional groups R1 and R2 do not contain oxygen, but they contain double bond. A first insulating film is deposited on the first SiC film. An interlayer insulating film containing the first SiC film and the first insulating film is formed. A copper wiring is embedded in the interlayer insulating film. A second SiC film is deposited on the interlayer insulating film covering the copper wiring with the same material as that of the first SiC film. COPYRIGHT: (C)2010,JPO&INPIT