NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

• Main Authors: MITANI YUICHIRO, YASUDA NAOKI, NAKASAKI YASUSHI, SHIMIZU TATSUO, KOIKE MASAHIRO, NISHIYAMA AKIRA
• Format: Patent
• Language: English
• Published: 18.03.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device having a tunnel insulating film, capable of reducing leakage current in a low electric field even if thinning EOT and also capable of increasing the leakage current of holes in a high electric field. SOLUTION: The device includes a storage element having: a semiconductor substrate 1; a source region 2a and a drain region 2b separately formed in the semiconductor substrate; and a first insulating layer 3 formed on an area between the source region and the drain region of the semiconductor substrate; a charge storage film 4 formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode 6 formed on the second insulating film, wherein the first insulating film 3 includes a first insulating layer and a second insulating layer which is formed on the first insulating layer, has a dielectric constant higher than that of the first insulating layer, and has a first site for capturing or emitting holes, formed by being doped with an element that is different from that of a base material. COPYRIGHT: (C)2010,JPO&INPIT