MEMORY CONTROL DEVICE, SEMICONDUCTOR TEST APPARATUS AND MEMORY CONTROL METHOD

PROBLEM TO BE SOLVED: To perform read-modify-write operation at a high speed. SOLUTION: A memory control device for controlling the read-modify-write of a DRAM 1 includes: a data storage part 10 for storing a part or all of data the same as target data for read-modify-write out of data to be stored...

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Bibliographic Details
Main Author SANO MASAYASU
Format Patent
LanguageEnglish
Published 18.03.2010
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Summary:PROBLEM TO BE SOLVED: To perform read-modify-write operation at a high speed. SOLUTION: A memory control device for controlling the read-modify-write of a DRAM 1 includes: a data storage part 10 for storing a part or all of data the same as target data for read-modify-write out of data to be stored in the DRAM 1; and a data processing part 9 for reading data stored in the data storage part 10, modifying the read data and writing the modified data in the DRAM 1. Since the target data are written in advance in the data storage part 10, data read from the data storage part 10 can be modified at read-modify-write. Consequently, data are not read from the DRAM 1, thereby increasing the speed of read-modify-write operation. COPYRIGHT: (C)2010,JPO&INPIT
Bibliography:Application Number: JP20080227864