INSPECTION METHOD OF SILICON WAFER

PROBLEM TO BE SOLVED: To improve stability and reproducibility of evaluation in wafer inspection. SOLUTION: In a copper deposition method, a wafer 30 having a surface insulating film 34 formed therein is loaded into a copper deposition device having upper and lower electrodes 10 and 12, and a methan...

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Bibliographic Details
Main Authors MURAKAMI YOSHIO, FUSEGAWA KAZUHIRO
Format Patent
LanguageEnglish
Published 11.03.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To improve stability and reproducibility of evaluation in wafer inspection. SOLUTION: In a copper deposition method, a wafer 30 having a surface insulating film 34 formed therein is loaded into a copper deposition device having upper and lower electrodes 10 and 12, and a methanol solution M containing copper ions is injected into the copper deposition device, and an external voltage is applied to the upper and lower electrodes 10 and 12 to deposit copper on a defective portion 35 of the wafer 30. Copper deposition processing is performed in a state where a resistance value Rm between the upper and lower electrodes 12 and 10 of the methanol solution M is set to a prescribed value. COPYRIGHT: (C)2010,JPO&INPIT
Bibliography:Application Number: JP20090277833