MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

• Main Authors: HARANO YUICHI, SUZUKI SHUSUKE
• Format: Patent
• Language: English
• Published: 11.03.2010
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a technique for improving manufacturing yield of a semiconductor device by suppressing dust generation because of friction between a wafer attracted to a stage by electrostatic chuck and a stage. SOLUTION: When the wafer is mounted on a top surface of the stage having an electrostatic chuck function to cool the wafer at a temperature of 50°C or more to a temperature lower than 50°C, voltage applied to an internal electrode provided to the stage is increased gradually, and a contact area between a rear surface of the wafer and the top surface of the stage is increased gradually, and at last the chuck voltage is applied to the internal electrode to cause the entire rear surface of the wafer to be attracted to the top surface of the stage, thereby flaw generated on the top surface of the stage because of friction between the rear surface of the wafer and the top surface of the stage is decreased. COPYRIGHT: (C)2010,JPO&INPIT