METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that can round off corners of an active region top edge without generating irregularity on the surface of the active region. SOLUTION: The method for manufacturing a semiconductor device has processes of forming an el...

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Bibliographic Details
Main Authors NAMIKATA HIROSHI, KASE YUKA, WADA TAKAYUKI
Format Patent
LanguageEnglish
Published 11.03.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that can round off corners of an active region top edge without generating irregularity on the surface of the active region. SOLUTION: The method for manufacturing a semiconductor device has processes of forming an element isolation insulating film for demarcating an active region, forming a natural oxide film with a film thickness of ≥0.1 nm and <0.7 nm, annealing at a temperature of >850°C and <950°C in an atmosphere including hydrogen, rounding off the corners of the active region, and reducing and removing the natural oxide film, and forming a gate insulating film on the active region from where the natural oxide film is removed. COPYRIGHT: (C)2010,JPO&INPIT
Bibliography:Application Number: JP20080217747