METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that can round off corners of an active region top edge without generating irregularity on the surface of the active region. SOLUTION: The method for manufacturing a semiconductor device has processes of forming an el...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
11.03.2010
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that can round off corners of an active region top edge without generating irregularity on the surface of the active region. SOLUTION: The method for manufacturing a semiconductor device has processes of forming an element isolation insulating film for demarcating an active region, forming a natural oxide film with a film thickness of ≥0.1 nm and <0.7 nm, annealing at a temperature of >850°C and <950°C in an atmosphere including hydrogen, rounding off the corners of the active region, and reducing and removing the natural oxide film, and forming a gate insulating film on the active region from where the natural oxide film is removed. COPYRIGHT: (C)2010,JPO&INPIT |
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Bibliography: | Application Number: JP20080217747 |