METHOD OF FABRICATING ORGANIC THIN FILM TRANSISTOR USING SURFACE ENERGY CONTROL

PROBLEM TO BE SOLVED: To provide an organic thin film transistor that can minimize leakage current and has high electric field effect mobility and low turn-on voltage. SOLUTION: The method of fabricating the organic thin film transistor includes: (a) a step of forming a gate electrode on a substrate...

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Bibliographic Details
Main Authors DO LEE MI, BAEK KYU-HA
Format Patent
LanguageEnglish
Published 12.02.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide an organic thin film transistor that can minimize leakage current and has high electric field effect mobility and low turn-on voltage. SOLUTION: The method of fabricating the organic thin film transistor includes: (a) a step of forming a gate electrode on a substrate and then forming a gate insulating layer on the entire surface; (b) a step of controlling surface energy of the gate insulating layer and then forming a semiconductor channel layer on the gate insulating layer using an organic semiconductor material; and (c) a step of forming a source electrode and a drain electrode on the semiconductor channel layer. COPYRIGHT: (C)2010,JPO&INPIT
Bibliography:Application Number: JP20090175444